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DIM200WLS12-A000
DIM200WLS12-A000
IGBT Chopper Module - Lower Arm Control
Replaces February 2004 version, issue FDS5697-2.0 FDS5697-3.0 June 2004
FEATURES
I I I
10s Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate
KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK)
1200V 2.2V 200A 400A
*(Measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I I I I I
Choppers Motor Controllers Induction Heating Resonant Converters Power Supplies
7(E2) 6(G2)
1(A,C2)
2(E2)
3(K)
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM200WLS12-A000 is a 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. Fig. 1 Chopper circuit diagram
ORDERING INFORMATION
Order As: DIM200WLS12-A000 Note: When ordering, please use the whole part number.
Outline type code: W (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/8
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DIM200WLS12-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Isolation voltage - per module Partial discharge - per module Tcase = 80C 1ms, Tcase = 115C Tcase = 25C, Tj = 150C VR = 0, tp = 10ms, Tvj = 125C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS VGE = 0V Test Conditions Max. 1200 20 200 400 1390 6.25 2500 10 Units V V A A W kA2s V PC
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al2O3 Baseplate material: Cu Creepage distance: 24mm Symbol Rth(j-c) Parameter Thermal resistance - transistor (per arm) Clearance: 13mm CTI (Critical Tracking Index): 175
Test Conditions Continuous dissipation junction to case
Min. -
Typ. -
Max. 90
Units C/kW
Rth(j-c)
Thermal resistance - diode (per arm) (Antiparallel and freewheel diode)
Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode
-
-
194
C/kW
Rth(c-h)
Thermal resistance - case to heatsink (per module)
-
-
15
C/kW
Tj
Junction temperature
-40 3 2.5
-
150 125 125 5 5
C C C Nm Nm
Tstg -
Storage temperature range Screw torque Mounting - M6
Electrical connections - M6
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200WLS12-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current (IGBT and Diode arm) IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C VGE = 20V, VCE = 0V IC = 10mA, VGE = VCE VGE = 15V, IC = 200A VGE = 15V, IC = 200A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage (IGBT and Diode arm) Cies LM RINT SCData Input capacitance Module inductance - per arm Internal transistor resistance Short circuit. ISC DC tp = 1ms IF = 200A IF = 200A, Tcase = 125C VCE = 25V, VGE = 0V, f = 1MHz Tj = 125C, VCC = 900V, tp 10s, VCE(max) = VCES - L*. di/dt IEC 60747-9 Note: Measured at the power busbars and not the auxiliary terminals) L* is the circuit inductance + LM I1 I2 Min. 4.5 Typ. 5.5 2.2 2.6 2.2 2.3 33 20 0.23 1375 1125 Max. 0.25 6 1 6.5 2.7 3.1 200 400 2.5 2.6 Units mA mA A V V V A A V V nF nH m A A
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/8
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DIM200WLS12-A000
ELECTRICAL CHARACTERISTICS - IGBT ARM
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 200A, VR = 600V, dIF/dt = 2300A/s Test Conditions IC = 200A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 4.7 L ~ 70nH Min. Typ. 600 50 20 240 95 25 2 30 150 13 Max. Units ns ns mJ ns ns mJ C C A mJ
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 200A, VR = 600V, dIF/dt = 2000A/s Test Conditions IC = 200A VGE = 15V VCE = 600V RG(ON) = RG(OFF) = 4.7 L ~ 70nH Min. Typ. 800 70 27 385 110 40 50 160 20 Max. Units ns ns mJ ns ns mJ C A mJ
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200WLS12-A000
TYPICAL CHARACTERISTICS
400 Common emitter Tcase = 25C 350 Vce is measured at power busbars
and not the auxiliary terminals
400 Common emitter Tcase = 125C 350 Vce is measured at power busbars
and not the auxiliary terminals
300
300
Collector current, IC - (A) VGE = 10V VGE = 12V VGE = 15V VGE = 20V 0.5 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 3.5 4.0
Collector current, IC - (A)
250
250
200
200
150
150
100
100 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-emitter voltage, Vce - (V) 4.5 5.0
50
50
0 0
0 0
Fig. 3 Typical output characteristics
45 Tc = 125C, Vcc = 600V, 40 Rg = 4.7 Ohms 35
40 55
Fig. 4 Typical output characteristics
Tc = 125C, Vcc = 600V, 50 IC = 200A 45
Switching energy, Esw - (mJ)
30 25 20 15 10
Switching energy, Esw - (mJ)
Eon Eoff Erec 0 50 100 150 Collector current, IC - (A) 200
35 30 25 20 15 10
5 0
5 0 4
Eon Eoff Erec 10 6 8 Gate resistance, Rg - (Ohms) 12
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/8
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DIM200WLS12-A000
400 Tj = 25C Tj = 125C 350
VF is measured at power busbars and not the auxiliary terminals
450
Module IC Chip IC
400 350
300
Forward current, IF - (A)
Collector current, IC - (A)
1.0 1.5 2.0 2.5 3.0 3.5 4.0
300 250 200 150 100
250
200
150
100
50
0 0.5
Forward voltage, VF - (V)
50 Tcase = 125C Vge = 15V Rg = 4.7 Ohms 0 0 200 400 600 800 1000 1200 Collector emitter voltage, Vce - (V)
1400
Fig. 7 Diode typical forward characteristics
300 Tcase =125C
Fig. 8 Reverse bias safe operating area
1000
Transient thermal impedance, Zth (j-c) - (C/kW )
250
Diode
Reverse recovery current, Irr - (A)
200
100
Transistor
150
100
10
50
IGBT Diode
0 0 200 400 600 800 1000 1200 1400 Reverse voltage, VR - (V)
1 0.001
Ri (C/KW) i (ms) Ri (C/KW) i (ms) 0.01
1 2.10 0.11 4.49 0.10
2 11.62 3.14 25.28 3.21
3 43.85 45.60 74.24 38.58 1
4 29.53 143.02 90.03 113.97 10
0.1 Pulse width, tp - (s)
Fig. 9 Diode reverse bias safe operating area - IGBT and diode arm
Fig. 10 Transient thermal impedance
6/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200WLS12-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
7(E2) 6(G2)
1(A,C2)
2(E2)
3(K)
Nominal weight: 420g Module outline type code: W
Fig. 11 Package details
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/8
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Tel: +33 (0)1 60 69 32 36. Fax: +33 (0)1 60 69 31 97 Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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